unisonic technologies co., ltd 60N15 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r502-816.a 60a, 150v n-channel power mosfet ? description the utc 60N15 is an n-channel power mosfet using utc?s advanced technology to provide the customers with perfect r ds(on) , high switching speed, high curr ent capacity and low gate charge. the utc 60N15 is suitable for motor control, ac-dc or dc-dc converters and audio amplifiers, etc. ? features * r ds(on) <30m ? @ v gs =10v,i d =30a * high switching speed * high current capacity * low gate charge(typical 130nc) ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 60N15l-t47-t 60N15g- t47-t to-247 g d s tube note: pin assignment: g: gate d: drain s: source
60N15 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-816.a ? absolute maximum ratings parameter symbol ratings unit drain-source voltage (v gs =0) v dss 150 v gate-source voltage v gss 20 v drain current continuous i d 60 a pulsed (note 1) i dm 240 a avalanche current i ar 60 a avalanche energy e as 1000 mj power dissipation p d 125 w junction temperature t j 150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse width limited by safe operating area ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 1 c/w ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 150 v drain-source leakage current i dss v ds =150v, v gs =0v 1 a gate-source leakage current forward i gss v gs =+20v, v ds =0v +100 na reverse v gs =-20v, v ds =0v -100 na on characteristics (note 2) gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2 3 4 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =30a 30 m ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 3900 pf output capacitance c oss 950 pf reverse transfer capacitance c rss 250 pf switching parameters total gate charge q g v gs =10v, v dd =75v, i d =60a 130 170 nc gate to source charge q gs 26 nc gate to drain charge q gd 55 nc turn-on delay time t d ( on ) v dd =30v, i d =60a, r g =4.7 ? , v gs =10v 30 ns rise time t r 180 ns fall-time t f 35 ns off-voltage rise time t r ( off ) 135 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s (note 1) 60 a maximum body-diode pulsed current i sm 240 a drain-source diode forward voltage v sd i sd =60a, v gs =0v (note 2) 1.6 v notes: 1. pulse width limited by safe operating area 2. pulsed: pulse duration=300s, duty cycle 1.5%
60N15 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-816.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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